symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 32 40 60 75 r q jl 17 24 avalanche current c 22 a repetitive avalanche energy l=0.3mh c 73 mj c -55 to 150 a 10 3.1 w 2.0 a maximum units parameter maximum junction-to-ambient a steady-state power dissipation t a =25c p dsm junction and storage temperature range t a =70c c/w absolute maximum ratings t a =25c unless otherwise noted vv 12 gate-source voltage drain-source voltage 30 i dsm 12.7 maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r q ja c/w pulsed drain current b 60 t a =70c continuous drain current af t a =25c AO4710 30v n-channel mosfet product summary v ds (v) = 30v i d =12.7a (v gs = 10v) r ds(on) < 11.8m w (v gs = 10v) r ds(on) < 14.2m w (v gs = 4.5v) 100% uis tested 100% rg tested general description srfet tm the AO4710 uses advanced trench technology with a monolithically integrated schottk y diode to provide excellent r ds(on) , and low gate charge. this device is suitable for use as a low si de fet in smps, load switching and general purpose applications. srfet tm soic-8 top view bottom view d d d d s s s g g ds srfet tm s oft r ecovery mos fet : integrated schottky diode alpha & omega semiconductor, ltd. www.aosmd.com
AO4710 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 0.02 0.1 t j =125c 6 20 i gss 0.1 m a v gs(th) gate threshold voltage 1.5 1.9 2.3 v i d(on) 60 a 9.8 11.8 t j =125c 15.2 19.0 11.7 14.2 m w g fs 78 s v sd 0.38 0.5 v i s 5 a c iss 1980 2376 pf c oss 317 pf c rss 111 pf r g 1.3 2.0 w q g (10v) 33 43 nc q g (4.5v) 15.0 20 nc q gs 5.3 nc q gd 6.0 nc t d(on) 5.5 ns t r 5.5 ns t d(off) 27.0 ns t f 4.3 ns t rr 11.2 13 ns q rr 7 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. total gate charge v gs =10v, v ds =15v, i d =12.7a gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1.2 w , r gen =3 w turn-off fall time turn-on delaytime m w v gs =4.5v, i d =11a i s =1a,v gs =0v v ds =5v, i d =12.7a maximum body-diode + schottky continuous current input capacitance output capacitance dynamic parameters r ds(on) static drain-source on-resistance forward transconductance diode forward voltage v ds =v gs i d =250 m a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss zero gate voltage drain current ma v ds =0v, v gs = 12v gate-body leakage current body diode reverse recovery time body diode reverse recovery charge i f =12.7a, di/dt=300a/ m s drain-source breakdown voltage on state drain current i d =1ma, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =12.7a reverse transfer capacitance i f =12.7a, di/dt=300a/ m s a: the value of r ja is measured withthe device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user's spe cific board design. b: repetitive rating, pulse width limited by juncti on temperature t j(max) =150c. c. the r ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a stil l air environment with t a =25c. the soa curve provides a single pulse rating. f. the current rating is based on the t 10s thermal resistance rating. rev4:nov. 2010 alpha & omega semiconductor, ltd. www.aosmd.com
AO4710 typical electrical and thermal characteristics dynamic parameters 0 20 40 60 80 100 0 1 2 3 4 5 v ds (volts) figure 1: on-region characteristics i d (a) 10v 4.5v v gs =3.5v 6v 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 v gs (volts) figure 2: transfer characteristics i d (a) 6 9 12 15 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 0 30 60 90 120 150 180 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance i d =12.7a v gs =10v v gs =4.5v 5 10 15 20 25 30 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) 25c 125 v ds =5v v gs =4.5v v gs =10v i d =12.7a 25c 125c i d =11a alpha & omega semiconductor, ltd. www.aosmd.com
AO4710 typical electrical and thermal characteristics dynamic parameters 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0.0 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150c t a =25c 100 m v ds =15v i d =12.7a 0 10 20 30 40 50 60 70 80 90 100 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure10: single pulse power rating junction-to- ambient (note e) power (w) t j(max) =150c t a =25c 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note e) z q qq q ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =75c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse alpha & omega semiconductor, ltd. www.aosmd.com
AO4710 typical electrical and thermal characteristics dynamic parameters 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 0 50 100 150 200 temperature (c) figure 12: diode reverse leakage current vs. junction temperature i r (a) vds=12v vds=24v 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 50 100 150 200 temperature (c) figure 13: diode forward voltage vs. junction temperature v sd (v) 0 5 10 15 20 25 0 5 10 15 20 25 30 is (a) figure 14: diode reverse recovery charge and peak current vs. conduction current q rr (nc) 0 2 4 6 8 irm (a) di/dt=800a/us 0 3 6 9 12 15 0 5 10 15 20 25 30 is (a) figure 15: diode reverse recovery time and soft coefficient vs. conduction current trr (ns) 0 0.5 1 1.5 2 2.5 s i s =1a 10a 20a 0 5 10 15 20 25 0 200 400 600 800 1000 di/dt (a) figure 16: diode reverse recovery charge and peak current vs. di/dt q rr (nc) 0 1 2 3 4 5 6 7 8 9 10 irm (a) 0 3 6 9 12 15 18 0 200 400 600 800 1000 di/dt (a) figure 17: diode reverse recovery time and soft coefficient vs. di/dt trr (ns) 0 0.5 1 1.5 2 2.5 3 s di/dt=800a/us 125oc 125oc 125oc 125oc 125oc 125o 125oc 125oc 25oc 25oc 25oc 25oc 25oc 25oc 25oc 25oc is=20a is=20a qrr irm trr qrr irm trr s s 5a alpha & omega semiconductor, ltd. www.aosmd.com
AO4710 i s =1a 10a 20a di/dt=800a/us 125oc 125oc 125oc 125oc 125oc 125o 125oc 125oc 25oc 25oc 25oc 25oc 25oc 25oc 25oc 25oc is=20a is=20a qrr irm trr qrr irm trr s s 5a - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar alpha & omega semiconductor, ltd. www.aosmd.com
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